AM29SL400DB90 SPANSION [SPANSION], AM29SL400DB90 Datasheet - Page 39

• Manufacturer Part Number: AM29SL400DB90
• Description: 4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
• Manufacturer: SPANSION [SPANSION]

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
TSOP PIN AND BGA PACKAGE CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
April 13, 2005 Rev. A Amend. +1
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time
(Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Minimum Pattern Data Retention Time
CC
Parameter Symbol
typicals assume checkerboard pattern.
faster than the maximum program times listed.
on page 17
Current
C
C
C
OUT
IN2
IN
for further information on command definitions.
A
= 25°C, f = 1.0 MHz.
CC
Parameter
. Test conditions: V
Description
Word Mode
Byte Mode
SS
SS
Control Pin Capacitance
Parameter Description
Output Capacitance
on all pins except I/O pins
on all I/O pins
Input Capacitance
A D V A N C E
CC
Typ (Note 1)
= 1.8 V, 1,000,000 cycles.
CC
0.7
3.5
38
10
12
5
= 1.8 V, one pin at a time.
Am29SL400D
I N F O R M A T I O N
Max (Note 2)
V
300
360
V
V
15
40
30
OUT
Test Conditions
IN
IN
°
C, 1.8 V V
= 0
= 0
= 0
150 ° C
125 ° C
Test Setup
CC
–100 mA
–1.0 V
–0.5 V
Fine-pitch BGA
Fine-pitch BGA
Fine-pitch BGA
, 1,000,000 cycles. Additionally, programming
Min
Unit
µs
µs
TSOP
TSOP
TSOP
s
s
s
s
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Min
10
20
Typ
4.2
8.5
5.4
7.5
3.9
6
Comments
V
+100 mA
CC
Max
7.5
5.0
6.5
4.7
11.0 V
12
9
Max
+ 0.5 V
Years
Years
Unit
Unit
Table 5
pF
pF
pF
pF
pF
pF
37