AM41LV3204MB10IT AMD [Advanced Micro Devices], AM41LV3204MB10IT Datasheet - Page 42

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AM41LV3204MB10IT

Manufacturer Part Number
AM41LV3204MB10IT
Description
Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and 4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
SRAM DC AND OPERATING CHARACTERISTICS
June 10, 2003
Parameter
Symbol
I
I
CC1
CC2
V
V
I
I
I
I
SB1
I
LO
CC
SB
OH
LI
OL
s
s
Input Leakage Current
Output Leakage Current
Operating Power Supply Current
Average Operating Current
Average Operating Current
Output Low Voltage
Output High Voltage
Standby Current (TTL)
Standby Current (CMOS)
Parameter Description
P R E L I M I N A R Y
V
CE1#s = V
V
I
WE# = V
Cycle time = 1 µs, 100% duty,
I
CE2
V
V
Cycle time = Min., I
100% duty, CE1#s = V
V
or V
I
I
CE1#s = V
inputs = V
CE1#s V
0.2 V (CE1#s controlled) or CE2
0.2 V (CE2s controlled) Other
input = 0 ~ V
IO
IO
OL
OH
IN
IH
IN
CC
IH
Am41LV3204M
= 0 mA, CE1#s = V
= 0 mA, CE1#s
, V
= 2.1 mA
= V
or WE# = V
= –1.0 mA
CC
V
IN
V
CC
SS
= V
CC
Test Conditions
IH
to V
– 0.2 V, CIOs = V
IH
, V
CC
IH
IH
– 0.2 V, V
IL
, CE2s = V
or V
, CE2 = V
CC
IN
= or V
– 0.2 V, CE2 V
CC
, CIOs = V
IL
= V
IL
, V
IH
IO
IO
IH
0.2 V,
= V
IN
, CIOs = V
or V
= 0 mA,
IL
IL
IL
IL
, Other
, CE2s =
, CE2s =
SS
or OE# =
0.2 V or
SS
IL
to V
SS
or V
CC
or
CC
SS
CC
–1.0
–1.0
Min
2.4
Typ
Max
1.0
1.0
0.4
0.3
30
10
3
3
Unit
mA
mA
mA
mA
µA
µA
µA
V
V
41

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