K4T1G084QD SAMSUNG [Samsung semiconductor], K4T1G084QD Datasheet - Page 12
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K4T1G084QD
Manufacturer Part Number
K4T1G084QD
Description
1Gb D-die DDR2 SDRAM Specification
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K4T1G084QD.pdf
(27 pages)
K4T1G084QD
K4T1G164QD
7.2 Operating Temperature Condition
7.3 Input DC Logic Level
7.4 Input AC Logic Level
7.5 AC Input Test Conditions
Note :
1. Input waveform timing is referenced to the input signal crossing through the V
2. The input signal minimum slew rate is to be maintained over the range from V
3. AC timings are referenced with input waveforms switching from V
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to
2. At 85 - 95 °C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to
max for falling edges as shown in the below figure.
transitions.
V
JESD51.2 standard.
self refresh mode at this temperature range, an EMRS command is required to change internal refresh rate.
SWING(MAX)
V
Symbol
V
Symbol
IH
SLEW
IL
Symbol
V
Symbol
V
TOPER
V
REF
IH
(AC)
IL
(AC)
(DC)
(DC)
AC input logic high
AC input logic low
Parameter
DC input logic high
DC input logic low
Parameter
Input signal maximum peak to peak swing
V
Input signal minimum slew rate
Falling Slew =
SWING(MAX)
Operating Temperature
Input reference voltage
Parameter
V
delta TF
REF
Condition
Min.
+ 0.250
DDR2-400, DDR2-533
-
V
REF
V
< AC Input Test Signal Waveform >
REF
- V
delta TF
Min.
- 0.3
IL
+ 0.125
(AC) max
IL
10 of 29
V
(AC) to V
REF
Max.
-
- 0.250
IH
delta TR
IH/IL
REF
(AC) on the positive transitions and V
V
V
Rising Slew =
REF
(AC) level applied to the device under test.
DDQ
to V
Max.
Rating
0 to 95
- 0.125
IH
+ 0.3
(AC) min for rising edges and the range from V
V
0.5 * V
REF
Value
Min.
1.0
1.0
+ 0.200
DDR2-667, DDR2-800
V
DDQ
IH
(AC) min - V
V
V
V
V
V
V
V
delta TR
DDQ
IH
IH
REF
IL
IL
SS
(DC) max
(AC) max
(AC) min
(DC) min
Units
Units
REF
V
V
V
°C
REF
Units
Max.
V/ns
IH
- 0.200
V
V
Rev. 1.0 March 2007
(AC) to V
DDR2 SDRAM
IL
(AC) on the negative
Notes
Notes
1, 2
REF
Notes
Units
2, 3
V
V
1
1
to V
IL
(AC)