K4T1G084QD SAMSUNG [Samsung semiconductor], K4T1G084QD Datasheet - Page 17
![no-image](/images/no-image-200.jpg)
K4T1G084QD
Manufacturer Part Number
K4T1G084QD
Description
1Gb D-die DDR2 SDRAM Specification
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K4T1G084QD.pdf
(27 pages)
K4T1G084QD
K4T1G164QD
11.0 DDR2 SDRAM IDD Spec Table
Symbol
IDD3P-S
Symbol
IDD3P-S
IDD3P-F
IDD3P-F
IDD4W
IDD4W
IDD2Q
IDD2N
IDD3N
IDD4R
IDD2Q
IDD2P
IDD2P
IDD2N
IDD3N
IDD4R
IDD0
IDD1
IDD5
IDD6
IDD7
IDD0
IDD1
IDD5
IDD6
IDD7
CE7
CE7
15
15
15
15
800@CL=5
800@CL=5
100
145
155
155
265
100
110
175
195
155
280
90
40
50
40
18
65
40
50
40
18
65
LE7
LE7
8
6
8
6
CF7
CF7
15
15
15
15
800@CL=6
800@CL=6
100
110
175
195
155
280
100
145
155
155
260
40
50
40
18
65
90
40
50
40
18
65
LF7
LF7
8
6
8
6
64Mx16 (K4T1G164QD)
128Mx8 (K4T1G084QD)
CE6
CE6
15
15
15
15
667@CL=5
667@CL=5
15 of 29
105
150
175
150
255
130
140
150
240
95
40
45
40
18
60
85
95
40
45
40
18
60
LE6
LE6
8
6
8
6
CD5
CD5
15
15
15
15
533@CL=4
533@CL=4
100
130
150
150
245
120
130
150
240
90
40
45
35
18
60
80
90
40
45
35
18
60
LD5
LD5
8
6
8
6
CCC
CCC
15
15
15
15
400@CL=3
400@CL=3
100
120
135
145
245
90
35
40
35
18
55
105
145
225
115
75
85
35
40
35
18
55
LCC
LCC
8
6
8
6
Rev. 1.0 March 2007
DDR2 SDRAM
(T
(T
Unit
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
A
A
=0
=0
o
o
C, VDD= 1.9V)
C, VDD= 1.9V)
Notes
Notes