K4T1G084QD SAMSUNG [Samsung semiconductor], K4T1G084QD Datasheet - Page 14

• Manufacturer Part Number: K4T1G084QD
• Description: 1Gb D-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

9.0 OCD default characteristics
K4T1G084QD
K4T1G164QD
Note :
1. Absolute Specifications (0°C ≤ T
2. Impedance measurement condition for output source dc current: VDDQ = 1.7V; VOUT = 1420mV; (VOUT-VDDQ)/Ioh must be less than 23.4 ohms for
3. Mismatch is absolute value between pull-up and pull-dn, both are measured at same temperature and voltage.
4. Slew rate measured from V
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is
6. This represents the step size when the OCD is near 18 ohms at nominal conditions across all process and represents only the DRAM uncertainty.
Output slew rate load :
7. DRAM output slew rate specification applies to 400Mb/sec/pin, 533Mb/sec/pin, 667Mb/sec/pin and 800Mb/sec/pin speed bins.
8. Timing skew due to DRAM output slew rate mis-match between DQS / DQS and associated DQs is included in tDQSQ and tQHS specification.
Output impedance
Output impedance step size for OCD calibration
Pull-up and pull-down mismatch
Output slew rate
values of VOUT between VDDQ and VDDQ- 280mV. Impedance measurement condition for output sink dc current: VDDQ = 1.7V; VOUT = 280mV;
VOUT/Iol must be less than 23.4 ohms for values of VOUT between 0V and 280mV.
guaranteed by design and characterization.
Description
IL
(AC) to V
CASE
≤ +95°C; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V)
IH
(AC).
Output
(V
OUT)
Parameter
Sout
V
12 of 29
TT
25 ohms
See full strength default driver characteristics
Min
1.5
0
0
Reference
Point
Normal 18ohms
Nom
Max
1.5
4
5
Rev. 1.0 March 2007
DDR2 SDRAM
ohms
ohms
ohms
V/ns
Unit
1,4,5,6,7,8
Notes
1,2,3
1,2
6