K4T1G084QD SAMSUNG [Samsung semiconductor], K4T1G084QD Datasheet - Page 24

• Manufacturer Part Number: K4T1G084QD
• Description: 1Gb D-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T1G084QD
K4T1G164QD
For all input signals the total tDS (setup time) and tDH (hold time) required is calculated by adding the data sheet tDS(base) and tDH(base) value to the
∆tDS and ∆tDH derating value respectively. Example: tDS (total setup time) = tDS(base) + ∆tDS.
Slew
V/ns
rate
DQ
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
∆tDS
188
146
63
1
2.0 V/ns
-
-
-
-
-
-
∆tDS1, ∆tDH1 Derating Values for DDR2-400, DDR2-533(All units in ‘ps’; the note applies to the entire table)
∆tDH
188
167
125
1
-
-
-
-
-
-
∆tDS
167
125
42
31
1
1.5 V/ns
-
-
-
-
-
∆tDH
146
125
83
69
1
-
-
-
-
-
∆tDS
125
-11
-25
83
1
0
1.0 V/ns
-
-
-
-
∆tDH
-14
-31
63
42
1
0
-
-
-
-
∆tDS
-13
-27
-45
81
-2
1
0.9 V/ns
-
-
-
-
DQS Single-ended Slew Rate
22 of 29
∆tDH
-13
-30
-53
43
1
1
-
-
-
-
∆tDS
-18
-32
-50
-74
-7
1
0.8 V/ns
-
-
-
-
∆tDH
-13
-27
-44
-67
-96
1
-
-
-
-
∆tDS
-128
-29
-43
-61
-85
0.7 V/ns
1
-
-
-
-
∆tDH
-114
-156
-45
-62
-85
1
-
-
-
-
∆tDS
-102
-145
-210
-60
-78
1
0.6 V/ns
-
-
-
-
∆tDH
-109
-138
-180
-243
-86
1
-
-
-
-
Rev. 1.0 March 2007
DDR2 SDRAM
∆tDS
-108
-138
-175
-240
1
0.5 V/ns
-
-
-
-
-
∆tDH
-152
-181
-223
-286
1
-
-
-
-
-
∆tDS
-183
-226
-291
1
0.4 V/ns
-
-
-
-
-
-
∆tDH
-246
-288
-351
1
-
-
-
-
-
-