K4T1G084QD SAMSUNG [Samsung semiconductor], K4T1G084QD Datasheet - Page 23

• Manufacturer Part Number: K4T1G084QD
• Description: 1Gb D-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

15.0 Specific Notes for dedicated AC parameters
9. User can choose which active power down exit timing to use via MRS(bit 12). tXARD is expected to be used for fast active power down exit timing.
10. AL = Additive Latency
11. This is a minimum requirement. Minimum read to precharge timing is AL + BL/2 providing the tRTP and tRAS(min) have been satisfied.
12. For DDR2-533/400, A minimum of two clocks (2*tCK) is required irrespective of operating frequency.
13. Timings are guaranteed with command/address input slew rate of 1.0 V/ns.
14. These parameters guarantee device behavior, but they are not necessarily tested on each device. They may be guaranteed by device design or tester
15. Timings are guaranteed with data, mask, and (DQS/RDQS in singled ended mode) input slew rate of 1.0 V/ns.
16. Timings are guaranteed with CK/CK differential slew rate of 2.0 V/ns. Timings are guaranteed for DQS signals with a differential slew rate of 2.0 V/ns
17. tDS and tDH derating Values
For all input signals the total tDS (setup time) and tDH(hold time) required is calculated by adding the datasheet tDS(base) and tDH(base) value to the
delta tDS and delta tDH derating value respectively. Example: tDS(total setup time)= tDS(base) + delta tDS.
K4T1G084QD
K4T1G164QD
Siew
Slew
V/ns
V/ns
rate
rate
DQ
DQ
tXARDS is expected to be used for slow active power down exit timing.
correlation.
in differential strobe mode and a slew rate of 1V/ns in single ended mode.
For DDR2-800/667, tnPARAM=RU{tPARAM / tCK(avg)}, which is in clock cycles, assuming all input clock jitter specification are satisfied.
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
2.0
1.5
1.0
0.9
0.8
0.7
0.6
0.5
0.4
∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH
∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH
125
100
83
67
0
0
4.0 V/ns
-
-
-
-
-
-
4.0 V/ns
-
-
-
-
-
-
∆tDS, ∆tDH Derating Values for DDR2-667, DDR2-800 (ALL units in ‘ps’, Note 1 applies to entire Table)
∆tDS, ∆tDH Derating Values of DDR2-400, DDR2-533 (ALL units in ‘ps’, Note 1 applies to entire Table)
45
21
45
21
0
0
-
-
-
-
-
-
-
-
-
-
-
-
125
100
-11
83
67
-5
0
0
3.0 V/ns
-
-
-
-
-
3.0 V/ns
-
-
-
-
-
-14
-14
45
21
45
21
0
0
-
-
-
-
-
-
-
-
-
-
125
100
-11
-25
-13
83
67
-5
0
2.0 V/ns
0
-
-
-
-
2.0 V/ns
-
-
-
-
-14
-31
-14
-31
45
21
45
21
0
0
-
-
-
-
-
-
-
-
-13
-31
-10
95
12
79
12
-1
1
1.8 V/ns
7
-
-
-
-
1.8 V/ns
-
-
-
-
DQS,DQS Differential Slew Rate
DQS,DQS Differential Slew Rate
21 of 29
-19
-42
-19
-42
33
12
-2
33
12
-2
-
-
-
-
-
-
-
-
-19
-43
-10
24
13
-1
24
19
11
1.6 V/ns
-
-
-
-
2
1.6 V/ns
-
-
-
-
-30
-59
-30
-59
24
10
-7
24
10
-7
-
-
-
-
-
-
-
-
-31
-74
-24
25
11
-7
31
23
14
-
-
-
-
2
1.4V/ns
-
-
-
-
1.4V/ns
-18
-47
-89
-18
-47
-89
22
22
5
-
-
-
-
5
-
-
-
-
-127
-19
-62
-12
-52
23
35
26
14
5
-
-
-
-
1.2V/ns
-
-
-
-
1.2V/ns
-140
-140
-35
-77
17
-35
-77
-6
17
-6
-
-
-
-
-
-
-
-
Rev. 1.0 March 2007
DDR2 SDRAM
-115
-50
17
-40
-7
38
26
-
-
-
-
-
0
1.0V/ns
-
-
-
-
-
1.0V/ns
-128
-128
-23
-65
-23
-65
6
-
-
-
-
-
6
-
-
-
-
-
-103
-38
-28
38
12
5
-
-
-
-
-
-
0.8V/ns
-
-
-
-
-
-
0.8V/ns
-116
-116
-11
-53
-11
-53
-
-
-
-
-
-
-
-
-
-
-
-