SI8802DB-T2-E1 VISHAY [Vishay Siliconix], SI8802DB-T2-E1 Datasheet - Page 3

• Manufacturer Part Number: SI8802DB-T2-E1
• Description: N-Channel 8 V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 67999
S11-1386-Rev. A, 11-Jul-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.16
0.12
0.08
0.04
15
12
0
9
6
3
0
5
4
3
2
1
0
0
0
0
I
D
= 1 A
0.5
On-Resistance vs. Drain Current
V
V
3
1
V
GS
DS
Output Characteristics
DS
Q
= 2 V
V
= 4.5 V
- Drain-to-Source Voltage (V)
g
V
GS
GS
- Total Gate Charge (nC)
I
1
D
= 1.2 V
Gate Charge
= 5 V thru 2 V
- Drain Current (A)
6
2
V
V
DS
GS
= 4 V
1.5
= 1.5 V
9
3
V
V
DS
2
GS
= 6.4 V
V
V
= 1.5 V
This document is subject to change without notice.
GS
GS
V
= 1.8 V
12
GS
= 2.5 V
4
2.5
= 1 V
15
New Product
5
3
600
500
400
300
200
100
1.4
1.2
1.0
0.8
0.6
10
0
8
6
4
2
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
- 25
V
rss
GS
0.3
= 4.5 V, 2.5 V, 1.8 V; I
V
V
V
Transfer Characteristics
GS
T
DS
GS
2
0
J
- Drain-to-Source Voltage (V)
= 1.5 V, I
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
T
oss
C
= 125 °C
25
0.6
Capacitance
D
= 0.2 A
50
4
T
C
V
Vishay Siliconix
= 25 °C
GS
D
0.9
www.vishay.com/doc?91000
C
= 1 A
= 1.2 V, I
75
iss
Si8802DB
100
T
6
C
D
www.vishay.com
1.2
= - 55 °C
= 0.1 A
125
150
1.5
8
3