SI8802DB-T2-E1 VISHAY [Vishay Siliconix], SI8802DB-T2-E1 Datasheet - Page 6

• Manufacturer Part Number: SI8802DB-T2-E1
• Description: N-Channel 8 V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si8802DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
6
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.01
0.1
0.1
1
0.0001
1
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper)
0.0001
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with minimum copper)
0.05
0.02
0.02
0.05
0.2
0.1
Duty Cycle = 0.5
0.1
0.2
Duty Cycle = 0.5
Single Pulse
Single Pulse
0.001
0.001
This document is subject to change without notice.
0.01
0.01
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
0.1
0.1
1
1
10
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
P
DM
DM
JM
JM
- T
- T
t
t
A
1
1
A
= P
= P
t
t
2
2
DM
DM
100
S11-1386-Rev. A, 11-Jul-11
100
Z
Document Number: 67999
Z
thJA
www.vishay.com/doc?91000
thJA
thJA
thJA
t
t
t
t
1
2
1
2
(t)
(t)
= 330 °C/W
= 185 °C/W
1000
1000