SI8802DB-T2-E1 VISHAY [Vishay Siliconix], SI8802DB-T2-E1 Datasheet - Page 4

• Manufacturer Part Number: SI8802DB-T2-E1
• Description: N-Channel 8 V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Si8802DB
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
100
0.1
0.8
0.7
0.6
0.5
0.4
0.3
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
Threshold Voltage
J
- Source-to-Drain Voltage (V)
= 150 °C
0.4
T
J
25
- Temperature (°C)
0.6
50
I
D
= 250 μA
75
T
0.8
J
= 25 °C
This document is subject to change without notice.
100
0.01
100
0.1
10
1
0.1
1.0
Safe Operating Area, Junction-to-Ambient
125
Limited by R
* V
T
A
GS
= 25 °C
150
New Product
> minimum V
1.2
V
DS
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
at which R
DS(on)
10
10 ms
DC
100 μs
1 ms
10 s, 1s, 100 ms
0.15
0.12
0.09
0.06
0.03
BVDSS Limited
is specified
14
12
10
0
8
6
4
2
0
0.001
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.01
100
1
V
GS
- Gate-to-Source Voltage (V)
0.1
2
Time (s)
1
S11-1386-Rev. A, 11-Jul-11
Document Number: 67999
www.vishay.com/doc?91000
T
3
J
= 25 °C
T
10
J
= 125 °C
I
D
= 1 A
4
100
1000
5