SI8802DB-T2-E1 VISHAY [Vishay Siliconix], SI8802DB-T2-E1 Datasheet - Page 5

• Manufacturer Part Number: SI8802DB-T2-E1
• Description: N-Channel 8 V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Note:
When mounted on 1" x 1" FR4 with full copper.
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67999
S11-1386-Rev. A, 11-Jul-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
3.5
2.5
1.5
0.5
3
2
1
0
0
25
D
T
is based on T
A
- Ambient Temperature (°C)
Current Derating*
50
75
J(max)
100
= 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
This document is subject to change without notice.
125
New Product
150
0.8
0.6
0.4
0.2
0.0
25
50
T
A
- Ambient Temperature (°C)
Power Derating
75
Vishay Siliconix
www.vishay.com/doc?91000
100
Si8802DB
www.vishay.com
125
150
5