K9K1208U0A-YCB0 Samsung semiconductor, K9K1208U0A-YCB0 Datasheet - Page 21

• Manufacturer Part Number: K9K1208U0A-YCB0
• Description: 64M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9K1208U0A-YCB0, K9K1208U0A-YIB0
RE
R/B
I/O
CLE
CE
WE
ALE
R/B
I/O
Figure 4. Read2 Operation
Figure 5. Sequential Row Read1 Operation
0
0
~
~
7
7
The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of a block is read-
out, the sequential read operation must be terminated by bringing CE high. When the page address moves onto
the next block, read command and address must be given.
00h
01h
(A
Don t Care)
50h
4
~ A
A
7
Start Add.(4Cycle)
:
0
~ A
1st half array
A
7
Start Add.(4Cycle)
0
& A
(00h Command)
~ A
Data Field
9
3
~ A
& A
25
9
~ A
2nd half array
25
t
R
Spare Field
1st half array
Data Field
Data Output
t
R
1st
2nd
Nth
1st
2nd half array
21
Block
Spare Field
t
R
1st half array
(01h Command)
Data Field
Data Output
(528 Byte)
Data Output(Sequential)
2nd
2nd half array
Spare Field
FLASH MEMORY
Spare Field
t
R
1st
2nd
Nth
Data Output
(528 Byte)
Nth