K9K1208U0A-YCB0 Samsung semiconductor, K9K1208U0A-YCB0 Datasheet - Page 7

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K9K1208U0A-YCB0

Manufacturer Part Number
K9K1208U0A-YCB0
Description
64M x 8 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet
K9K1208U0A-YCB0, K9K1208U0A-YIB0
VALID BLOCK
NOTE :
1. The
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block
MODE SELECTION
NOTE : 1. X can be V
Program/Erase Characteristics
AC TEST CONDITION
(K9K1208U0A-YCB0 :TA=0 to 70 C, K9K1208U0A-YIB0:TA=-40 to 85 C, VCC=2.7V~3.6V unless otherwise)
CAPACITANCE
NOTE : Capacitance is periodically sampled and not 100% tested.
Valid Block Number
Program Time
Number of Partial Program Cycles
in the Same Page
Block Erase Time
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (3.0V +/-10%)
Output Load (3.3V +/-10%)
blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
to access these invalid blocks for program and erase.
Input/Output Capacitance
Input Capacitance
CLE
H
H
X
X
X
X
L
L
L
L
L
K9K1208U0A
2. WP should be biased to CMOS high or CMOS low for standby.
Parameter
Item
ALE
X
H
H
X
X
X
L
L
L
L
L
(1)
IL
Parameter
or V
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid
(
T
Parameter
IH.
A
=25 C, V
CE
X
X
X
H
L
L
L
L
L
L
L
CC
=3.3V, f=1.0MHz)
Symbol
Symbol
N
C
WE
C
H
H
X
X
X
X
VB
Spare Array
I/O
IN
Main Array
RE
Refer to the attached technical notes for a appropriate management of invalid blocks.
Test Condition
H
H
H
H
H
H
X
X
X
X
V
V
4,026
Min
IN
IL
Symbol
=0V
=0V
t
t
PROG
Nop
BERS
7
0V/V
WP
X
X
H
H
H
X
X
H
H
L
CC
(2)
Data Input
sequential Read & Data Output
During Read(Busy)
During Program(Busy)
During Erase(Busy)
Write Protect
Stand-by
1 TTL GATE and CL=100pF
1 TTL GATE and CL=50pF
Read Mode
Write Mode
Min
-
-
-
-
Typ.
Min
-
-
-
0.4V to 2.4V
Value
1.5V
5ns
Command Input
Address Input(4clock)
Command Input
Address Input(4clock)
Typ
200
2
-
-
FLASH MEMORY
4,096
Max
Max
Mode
30
30
Max
500
2
3
3
Blocks
Unit
. Do not try
Unit
pF
pF
cycles
cycles
Unit
ms
s

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