K9K1208U0A-YCB0 Samsung semiconductor, K9K1208U0A-YCB0 Datasheet - Page 26

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K9K1208U0A-YCB0

Manufacturer Part Number
K9K1208U0A-YCB0
Description
64M x 8 Bit NAND Flash Memory
Manufacturer
Samsung semiconductor
Datasheet
DATA PROTECTION
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
during power-up and power-down as shown in Figure 11. The two step command sequence for program/erase provides additional
software protection.
K9K1208U0A-YCB0, K9K1208U0A-YIB0
Figure 11. AC Waveforms for Power Transition
V
WP
CC
~ 2.5V
High
26
FLASH MEMORY
~ 2.5V
IL

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