K9K1G08R0B SAMSUNG [Samsung semiconductor], K9K1G08R0B Datasheet - Page 12

• Manufacturer Part Number: K9K1G08R0B
• Description: 128M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

AC Timing Characteristics for Command / Address / Data Input
NOTE : 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
AC Characteristics for Operation
NOTE : 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
Data Transfer from Cell to Register
ALE to RE Delay
CLE to RE Delay
Ready to RE Low
RE Pulse Width
WE High to Busy
Read Cycle Time
RE Access Time
CE Access Time
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
Output Hi-Z to RE Low
WE High to RE Low
Device Resetting Time(Read/Program/Erase)
CLE Set-up Time
CLE Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Parameter
Parameter
Symbol
t
t
t
t
t
t
t
t
t
CLH
t
t
CLS
ALS
ALH
WP
WC
WH
CS
CH
DS
DH
1.8V
10
10
40
10
20
10
60
20
0
0
0
Symbol
t
t
t
t
t
t
t
t
t
WHR
t
t
t
t
t
REH
CLR
REA
CEA
RHZ
CHZ
RST
t
WB
OH
t
AR
RR
RP
RC
IR
R
2.7V
25
Min
10
10
10
20
10
50
15
0
0
0
(1)
1.8V
10
10
20
40
60
15
20
60
0
0
-
-
-
-
-
-
3.3V
25
12
10
10
10
20
10
50
15
0
0
0
(1)
2.7V
Min
10
10
20
25
50
15
15
60
0
-
-
-
-
-
-
-
1.8V
.-
-
-
-
-
-
-
-
-
-
-
3.3V
10
10
20
25
50
15
15
60
0
-
-
-
-
-
-
-
2.7V
Max
5/10/500
.-
-
-
-
-
-
-
-
-
-
-
1.8V
100
15
40
55
30
20
-
-
-
-
-
-
-
-
-
FLASH MEMORY
(1)
3.3V
5/10/500
.-
-
-
-
-
-
-
-
-
-
-
Max
2.7V
100
15
30
45
30
20
-
-
-
-
-
-
-
-
-
(1)
5/10/500
Advance
3.3V
100
15
30
45
30
20
Unit
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(1)
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs