K9K1G08R0B SAMSUNG [Samsung semiconductor], K9K1G08R0B Datasheet - Page 17

• Manufacturer Part Number: K9K1G08R0B
• Description: 128M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

Figure 7. Read Operation with CE don’t-care.
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte page registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-
ing would provide significant savings in power consumption.
Figure 6. Program Operation with CE don’t-care.
K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
CLE
CE
WE
ALE
I/O
CE
WE
CLE
ALE
R/B
I/O
CE
WE
RE
X
X
t
CS
00h
80h
Start Add.(4Cycle)
Start Add.(4Cycle)
t
WP
t
CH
t
R
Data Input
17
I/O
CE
RE
X
CE don’t-care
t
CE don’t-care
Data Output(sequential)
CEA
t
REA
FLASH MEMORY
Data Input
out
Advance
10h