K9K1G08R0B SAMSUNG [Samsung semiconductor], K9K1G08R0B Datasheet - Page 37

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K9K1G08R0B

Manufacturer Part Number
K9K1G08R0B
Description
128M x 8 Bit NAND Flash Memory
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet

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Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Four read cycles sequentially output the manufacture code(ECh), and the device code*, Reserved(A5h), Multi plane operation
code(C0h) respectively. A5h must be don’t-cared. C0h means that device supports Multi Plane operation but must be don’t-cared for
1.8V device. The command register remains in Read ID mode until further commands are issued to it. Figure 20 shows the operation
sequence.
Figure 20. Read ID Operation 1
K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
CLE
CE
WE
ALE
RE
I/O
0
~
7
90h
Address. 1cycle
00h
t
WHR
t
AR
t
CEA
t
REA
37
Maker code
ECh
K9K1G08R0B
K9K1G08U0B
K9K1G08B0B
Device*
Device
Code
FLASH MEMORY
A5h
Device Code
78h
79h
79h
Advance
Multi-Plane code
C0h

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