K9K1G08R0B SAMSUNG [Samsung semiconductor], K9K1G08R0B Datasheet - Page 32

• Manufacturer Part Number: K9K1G08R0B
• Description: 128M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

Restirction in addressing with Multi Plane Page Program
Figure 13. Multi-Plane Program & Read Status Operation
Figure 14. Addressing Multiple Planes
While any block in each plane may be addressable for Multi-Plane Page Program, the four least significant addresses(A9-A13) for
the selected pages at one operation must be the same. Figure 13 shows an example where 2nd page of each addressed block is
selected for four planes. However, any arbitrary sequence is allowed in addressing multiple planes as shown in Figure17.
Figure 15. Multi-Plane Page Program & Read Status Operation
Multi-Plane Block Erase into Plane 0~3 or Plane 4~7
Basic concept of Multi-Plane Block Erase operation is identical to that of Multi-Plane Page Program. Up to four blocks, one from each
plane can be simultaneously erased. Standard Block Erase command sequences (Block Erase Setup command followed by three
address cycles) may be repeated up to four times for erasing up to four blocks. Only one block should be selected from each plane.
The Erase Confirm command initiates the actual erasing process. The completion is detected by analyzing R/B pin or Ready/Busy
status (I/O 6). Upon the erase completion, pass/fail status of each block is examined by reading extended pass/fail status(I/O 1
through I/O 4).
Figure 16. Four Block Erase Operation
K9K1G08R0B
K9K1G08B0B
K9K1G08U0B
R/B
I/O
R/B
I/O
0
0
~
~
7
7
Block 0
80h
60h
Plane 0
(1024 Block)
Page 30
Page 31
Page 0
Page 1
A
0
~ A
(3 Cycle)
80h
Plane 2
Address
7
& A
9
Last Plane input
~ A
A
26
Address & Data Input
60h
0
528 Byte Data
~ A
11h
7
& A
(3 Cycle)
Address
9
80h
Block 1
~ A
26
Plane 1
(1024 Block)
Page 30
Page 31
Page 0
Page 1
Plane 0
60h
10h
(3 Cycle)
Address
11h
32
60h
80h
t
PROG
Plane 2
(1024 Block)
(3 Cycle)
Block 2
Address
Plane3
Page 30
Page 31
Page 0
Page 1
D0h
11h
71h
t
BERS
80h
FLASH MEMORY
71h
Plane 1
Plane 3
(1024 Block)
Block 3
Page 30
Page 31
Fail
I/O
Page 0
Page 1
Fail
I/O
Advance
10h
Pass
Pass