EN29GL256H EON [Eon Silicon Solution Inc.], EN29GL256H Datasheet - Page 35

• Manufacturer Part Number: EN29GL256H
• Description: 256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

Table 9. CFI Query Identification String
(Word Mode)
Table 10. System Interface String
Table 11. Device Geometry Definition
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
(Word Mode)
(Word mode)
Addresses
Addresses
Addresses
1Ah
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ch
1Dh
1Bh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
2Ch
2Dh
2Ah
2Bh
2Eh
2Fh
27h
28h
29h
30h
31h
32h
33h
34h
35h
36h
37h
38h
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
0027h
0036h
0000h
0000h
0003h
0004h
0009h
0000h
0005h
0005h
0004h
0000h
Data
Data
00FFh
0019h
0002h
0000h
0006h
0000h
0001h
0000h
0000h
0002h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
Data
Query Unique ASCII string “QRY”
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
Vcc Min (write/erase)
DQ7-DQ4: volt, DQ3-DQ0: 100mV
Vcc Max (write/erase)
DQ7-DQ4: volt, DQ3-DQ0: 100mV
Vpp Min voltage (00h = no Vpp pin present)
Vpp Max voltage (00h = no Vpp pin present)
Typical timeout per single byte/word write 2
Typical timeout for min size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max timeout for byte/word write 2
Max timeout for buffer write 2
Max timeout per individual block erase 2
Max timeout for full chip erase 2
Device Size = 2
Flash Device Interface Description (refer to CFI publication 100);
01h = X16 only; 02h = x8/x16
Max number of byte in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification of CFI publication 100)
256 uniform sectors (7Fh + 1)
Erase Block Region 3 Information
(refer to the CFI specification of CFI publication 100)
Erase Block Region 3 Information
(refer to the CFI specification of CFI publication 100)
Rev. G, Issue Date: 2011/01/17
N
bytes. 2**25=32MB=256Mb
35
N
Description
Description
times typical
Description
©2004 Eon Silicon Solution, Inc.,
N
N
times typical (00h = not supported)
N
times typical
ms (00h = not supported)
N
N
times typical
µs (00h = not supported)
N
N
N
ms
µs
EN29GL256H/L
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