EN29GL256H EON [Eon Silicon Solution Inc.], EN29GL256H Datasheet - Page 46

• Manufacturer Part Number: EN29GL256H
• Description: 256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

Table 21. Write (Erase/Program) Operations
Alternate
JEDEC
t
t
Notes: 1. Not 100% tested.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
AC CHARACTERISTICS
t
WHWH1
WHWH2
t
t
t
t
t
t
t
t
t
EHWH
DVEH
EHDX
GHEL
WLEL
AVAV
AVEL
ELAX
ELEH
EHEL
Parameter
Symbols
2. See table.22 Erase and Programming Performance for more information.
3. For 1~32 words bytes programmed.
CE#
Standard
t
t
WHWH1
WHWH2
t
t
GHEL
t
t
t
t
t
t
t
t
CPH
WC
WS
WH
AS
AH
DS
DH
CP
Controlled Writes
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recovery Time before
Write (OE# High to CE# Low)
WE# SetupTime
WE# Hold Time
Write Pulse Width
Write Pulse Width High
Write Buffer Program Operation
(Note 2, 3)
Programming Operation
(Byte AND word mode)
Sector Erase Operation
Description
Rev. G, Issue Date: 2011/01/17
46
Max
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
©2004 Eon Silicon Solution, Inc.,
Speed
160
200
-90
0.1
90
45
40
45
20
0
0
0
0
0
8
2
EN29GL256H/L
www.eonssi.com
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
s
s