EN29GL256H EON [Eon Silicon Solution Inc.], EN29GL256H Datasheet - Page 57

• Manufacturer Part Number: EN29GL256H
• Description: 256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

Revisions List
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Revision No Description
A
B
C
D
E
F
G
Preliminary
1. Add internal pull-up description for WP# pin in Table1 on Page 4
2. Add WP#/ACC, VIO pin in Figure3 on Page 4
3. Modify tOE from 30ns to 25ns in Table 17 on page 40 and Page 5
4. Add Secured Silicon Sector Entry/Exit command in Table13
5. Modify typo from Sector Erase Suspend to Erase/Program Suspend,
6. Modify package code for 56-pin TSOP from T to Z in ordering
7. Del table 22 and Figure 20 Temporary Sector Unprotect Timing table and
8. Modify Erase/Program performance in Table 20, 21 and 22.
9. Del t
10. Modify DC Characteristics in table 15
11. Del apply VID on address pin A9 to access autoselect codes function.
12. Modify A9 spec from 9.5V to Vcc+0.5V in ABSOLUTE MAXIMUM
13. Modify CFI 4Ah, 4Fh description and data of 4Fh in table 12
14. Modify CFI data for address 27h and 2Dh.
15. Modify typo Sector Architecture 128 to 256 sectors on page1
16. Modify typo Byte mode to Word mode on page7
1. Modify naming for DQ0 OTP Lock Bit to Secured Silicon Sector
2. Modify Table.8 Secured Silicon Sector Address Range 000000h-
3. Add note “The address 0h~7h in Secured Silicon Sector is reserved
4. Update FIGURE 21. 64 ball Fortified Ball Grid Array (FBGA), 11 X13 mm,
5. Modify from Sector 0 to all sectors in note 1 of Table 6 and note 2, 3 and
6. Add “User only can use DQ6 and RY/BY# pin to detect programming
Change the package code of 64-ball BGA on page 56.
1. Correct typo in Table 20, “
2. Add a note "when sector SA0 is suspended, if system enters Secured
1. Add Write Buffer byte mode command and note that maximum value is 31
2. Change the speed option from 70ns to 90ns, and modify related
Update the
and 41.
VHH from 10.5~11.5V to 8.5~9.5V
ICC1 5MHz 9 15mA typ, 10MHz 16 25mA typ
ICC4, ICC5 and ICC6 1 1.5uA typ, 5 10uA max
Add IIO2 and IACCspec
from Sector Erase Resume to Erase/Program resume in Table13
information on Page 57
Diagram and Figure 21.Sector Protect/Unprotect Timing Diagram
Chip erase time from 64 60sec typ and 560 240sec max.
Add ACC and total write buffer time spec
( Remove TABLE 5 and modify description Autoselect section for using
High voltage to get Autoselect Codes )
RATINGS
Pitch 1mm package outline on page 55
note 9 of PPB section on page 28
status” in note 10 on page29
Sector mode,..." on page 32.
Protection Bit on Page 28
000007h from Determined by customer to Reserve for Factory
for Factory“ on Page 34
for word and byte mode in page 37.
parameter for 90ns speed.
CEH
on table 17
Output Load Capacitance from 100pF to 30pF on page 40
Rev. G, Issue Date: 2011/01/17
t
B
BUSY
57
“
from Min. to Max on page 45.
©2004 Eon Silicon Solution, Inc.,
EN29GL256H/L
www.eonssi.com
Date
2009/02/18
2009/05/12
2009/7/14
2009/07/22
2010/01/26
2010/03/31
2011/01/17