EN29GL256H EON [Eon Silicon Solution Inc.], EN29GL256H Datasheet - Page 41

• Manufacturer Part Number: EN29GL256H
• Description: 256 Megabit (32768K x 8-bit / 16384K x 16-bit) Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only
• Manufacturer: EON [Eon Silicon Solution Inc.]

AC CHARACTERISTICS
Table 17. Read-only Operations Characteristics
Notes:
1. High Z is Not 100% tested.
2. For - 90
Figure 10. AC Waveforms for READ Operations
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Addresses
RESET#
Outputs
RY/BY#
JEDEC
t
t
t
t
t
t
t
AVAV
AVQV
ELQV
GLQV
EHQZ
GHQZ
AXQX
WE#
CE#
OE#
Parameter
Symbols
0V
Standard
t
t
t
t
t
t
t
t
t
RC
ACC
CE
PACC
OE
DF
DF
OH
OEH
Vcc = 2.7V – 3.6V
Output Load : 1 TTL gate and 30pF
Input Rise and Fall Times: 5ns
Input Rise Levels: 0.0 V to 3.0 V
Timing Measurement Reference Level, Input and Output: 1.5 V
Read Cycle Time
Address to Output Delay
Chip Enable To Output Delay
Page Access Time
Output Enable to Output Delay
Chip Enable to Output High Z
Output Enable to Output High Z
Output Hold Time from
Addresses, CE# or OE#,
whichever occurs first
Output Enable
Hold Time
tB
O EH
HIGH Z
Description
B
tB
A CC
Rev. G, Issue Date: 2011/01/17
Addresses Stable
Read
Toggle and
DATA#
tB
C E
B
tB
Polling
O E
tB
R C
B
41
B
CE# = V
OE#= V
OE#= V
©2004 Eon Silicon Solution, Inc.,
Output Valid
Test Setup
IL
IL
IL
Max
Max
Max
Max
Max
Max
Min
Min
Min
Min
tB
O H
tB
D F
EN29GL256H/L
Speed
-90
25
35
HIGH Z
90
90
90
20
20
10
0
0
www.eonssi.com
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns