DAC1008D650HN/C1 NXP Semiconductors, DAC1008D650HN/C1 Datasheet - Page 8

• Manufacturer Part Number: DAC1008D650HN/C1
• Description: Digital to Analog Converters - DAC DL 10BIT DAC 650MSPS 2X 4X OR 8X INT
• Manufacturer: NXP Semiconductors

Specifications of DAC1008D650HN/C1

• Rohs: yes
• Factory Pack Quantity: 260

NXP Semiconductors
Table 5.
V
+85
maximum sample rate; PLL off unless otherwise specified.
DAC1008D650
Product data sheet
Symbol
V
R
C
Digital inputs (SDO, SDIO, SCLK, SCS_N, RESET_N)
V
V
I
I
Digital outputs (SDO, SDIO)
V
V
Digital inputs (Vin_p/Vin_n)
V
V
Z
Z
Digital outputs (SYNC_OUTN/SYNC_OUTP)
V
V
Digital inputs/outputs (MDS_N/MDS_P)
V
C
C
IL
IH
DDA(1V8)
tt
idth
IL
IH
OL
OH
I(cm)
I(dif)(p-p)
o(cm)
o(dif)(p-p)
o(dif)(p-p)
i
I
o(L)
I
i

C; typical values measured at V
= V
Characteristics
DDD
Parameter
input differential
threshold voltage
input resistance
input capacitance
LOW-level input
voltage
HIGH-level input
voltage
LOW-level input
current
HIGH-level input
current
LOW-level output
voltage
HIGH-level output
voltage
common-mode input
voltage
peak-to-peak
differential input
voltage
V
differential input
impedance
common-mode output
voltage
peak-to-peak
differential output
voltage
peak-to-peak
differential output
voltage
Output load
capacitance
Input capacitance
= 1.7 V to 1.9 V; V
tt
source impedance
…continued
[5]
DDA(3V3)
DDA(1V8)
Conditions
V
V
V
I
I
between pins GND and
MDS_N or MDS_P
between pins GND and
MDS_N or MDS_P
load
load
All information provided in this document is subject to legal disclaimers.
IL
IH
gpd
= 3.13 V to 3.47 V; AGND and GND are shorted together; T
= 0.3V
= 0.7V
= V
= 2 mA
= 2 mA
 < 50 mV
[6]
DDD
Rev. 3 — 31 January 2012
DDD
DDD
= 1.8 V; V
[4]
V
V
DDA(3V3)
2, 4 or 8 interpolating DAC with JESD204A
= 3.3 V; T
Test
C
D
D
C
C
I
I
C
C
D
D
D
D
C
C
D
D
D
[1]
amb
Min
100
-
-
GND
0.7V
-
-
GND
1.65
-
175
-
-
-
-
-
-
-
= +25
DDD
DAC1008D650

C; R
Typ
-
10
0.5
-
-
1
1
-
-
0.78
-
0.7
100
1.18
0.45
600
-
0.3
L
= 50
-
Max
+100
-
-
0.3V
V
-
-
0.13
V
-
1000
-
-
-
-
-
10

© NXP B.V. 2012. All rights reserved.
amb
DDD
DDD
; I
O(fs)
=
DDD

40
= 20 mA;

Unit
mV
M
pF
V
V
A
A
V
V
V
mV


V
V
mV
pF
pF
C to
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