CY7C1380D-167AXC Cypress Semiconductor Corp, CY7C1380D-167AXC Datasheet - Page 23
![IC SRAM 18MBIT 167MHZ 100LQFP](/photos/6/76/67624/428-100-tqfp_14x20x1_4_sml.jpg)
CY7C1380D-167AXC
Manufacturer Part Number
CY7C1380D-167AXC
Description
IC SRAM 18MBIT 167MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Type
Synchronousr
Datasheet
1.CY7C1380D-167AXC.pdf
(34 pages)
Specifications of CY7C1380D-167AXC
Memory Size
18M (512K x 36)
Package / Case
100-LQFP
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Speed
167MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Access Time
3.4 ns
Maximum Clock Frequency
167 MHz
Supply Voltage (max)
3.6 V
Supply Voltage (min)
3.135 V
Maximum Operating Current
275 mA
Maximum Operating Temperature
+ 70 C
Minimum Operating Temperature
0 C
Mounting Style
SMD/SMT
Number Of Ports
4
Operating Supply Voltage
3.3 V
Density
18Mb
Access Time (max)
3.4ns
Sync/async
Synchronous
Architecture
SDR
Clock Freq (max)
167MHz
Operating Supply Voltage (typ)
3.3V
Address Bus
19b
Package Type
TQFP
Operating Temp Range
0C to 70C
Supply Current
275mA
Operating Supply Voltage (min)
3.135V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
100
Word Size
36b
Number Of Words
512K
Memory Configuration
1M X 18 / 512K X 36
Clock Frequency
167MHz
Supply Voltage Range
3.135V To 3.6V
Memory Case Style
TQFP
No. Of Pins
100
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
428-1629
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1380D-167AXC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1380D-167AXC
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Company:
Part Number:
CY7C1380D-167AXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Waveforms
Document #: 38-05543 Rev. *F
Note
26. On this diagram, when CE is LOW: CE
Data Out (Q)
GW, BWE,
ADDRESS
ADSC
ADSP
BWx
ADV
CLK
OE
CE
t
ADS
t AS
t CES
A1
t
ADH
t AH
t CEH
t
CH
High-Z
t CYC
t WES
t
CL
Single READ
t CLZ
t WEH
t CO
1
is LOW, CE
t ADS
A2
Q(A1)
t ADH
t OEHZ
2
t ADVS
Figure 10. Read Cycle Timing
is HIGH and CE
t ADVH
t OELZ
t OEV
Q(A2)
DON’T CARE
t DOH
t CO
3
is LOW. When CE is HIGH: CE
Q(A2 + 1)
ADV
suspends
burst.
UNDEFINED
Q(A2 + 2)
[26]
BURST READ
1
is HIGH or CE
CY7C1380D, CY7C1382D
Q(A2 + 3)
CY7C1380F, CY7C1382F
2
is LOW or CE
A3
Q(A2)
Burst continued with
new base address
Burst wraps around
to its initial state
Q(A2 + 1)
3
t CHZ
Deselect
cycle
is HIGH.
Page 23 of 34
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