HYB25D512800CE-6 Qimonda, HYB25D512800CE-6 Datasheet - Page 10

• Manufacturer Part Number: HYB25D512800CE-6
• Description: IC DDR SDRAM 512MBIT 66TSOP
• Manufacturer: Qimonda

Specifications of HYB25D512800CE-6

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 675-1008-2

Rev. 1.41, 2007-12
03292006-3TFJ-HNV3
Abbreviation
I
O
I/O
AI
PWR
GND
NC
Abbreviation
SSTL
LV-CMOS
CMOS
OD
Description
Standard input-only pin. Digital levels
Output. Digital levels
I/O is a bidirectional input/output signal
Input. Analog levels
Power
Ground
Not Connected
Description
Serial Stub Terminalted Logic (SSTL2)
Low Voltage CMOS
CMOS Levels
Open Drain. The corresponding pin has 2 operational states, active low and tristate, and
allows multiple devices to share as a wire-OR
Date: 2007-12-13
10
HY[B/I]25D512[40/80/16]0C[C/E/F/T](L)
512-Mbit Double-Data-Rate SDRAM
Abbreviations for Buffer Type
Abbreviations for Pin Type
Internet Data Sheet
TABLE 5
TABLE 6