HYB25D512800CE-6 Qimonda, HYB25D512800CE-6 Datasheet - Page 27

• Manufacturer Part Number: HYB25D512800CE-6
• Description: IC DDR SDRAM 512MBIT 66TSOP
• Manufacturer: Qimonda

Specifications of HYB25D512800CE-6

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 675-1008-2

1) These values are guaranteed by design and are tested on a sample base only.
2) DM inputs are grouped with I/O pins reflecting the fact that they are matched in loading to DQ and DQS to facilitate trace matching at the
Rev. 1.41, 2007-12
03292006-3TFJ-HNV3
Parameter
Input Capacitance: CK, CK
Delta Input Capacitance
Input Capacitance: All other input-only pins
Delta Input Capacitance: All other input-only pins
Input/Output Capacitance: DQ, DQS, DM
Delta Input/Output Capacitance: DQ, DQS, DM
V
board level.
OUT(DC)
=
V
DDQ
/2,
V
OUT
(Peak to Peak) 0.2 V. Unused pins are tied to ground.
Date: 2007-12-13
Symbol
C
C
C
C
C
C
I1
dI1
I2
dIO
IO
dIO
27
Min.
2.0
1.5
—
1.5
2.0
—
3.5
4.0
—
V
DDQ
Values
Typ.
—
—
—
—
—
—
—
—
—
=
HY[B/I]25D512[40/80/16]0C[C/E/F/T](L)
V
DD
Max.
3.0
2.5
0.25
2.5
3.0
0.5
4.5
5.0
0.5
512-Mbit Double-Data-Rate SDRAM
= 2.5 V ± 0.2 V, f = 100 MHz, T
Input and Output Capacitances
Unit
pF
pF
pF
pF
pF
pF
pF
pF
pF
Note/ Test Condition
TSOPII
TFBGA
1)
TFBGA
TSOPII
1)
TFBGA
TSOPII
1)
Internet Data Sheet
1)
1)
1)2)
1)
1)
1)2)
TABLE 20
A
= 25 °C,