HYB25D512800CE-6 Qimonda, HYB25D512800CE-6 Datasheet - Page 25

• Manufacturer Part Number: HYB25D512800CE-6
• Description: IC DDR SDRAM 512MBIT 66TSOP
• Manufacturer: Qimonda

Specifications of HYB25D512800CE-6

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 675-1008-2

10) A Write command may be applied after the completion of data output.
Rev. 1.41, 2007-12
03292006-3TFJ-HNV3
From Command
WRITE w/AP
Read w/AP
transfer and all other limitations apply (e.g. contention between READ data and WRITE data must be avoided). The minimum delay from
a read or write command with auto precharge enable, to a command to a different banks is summarized in
Read or Read w/AP
To Command (different bank)
Write to Write w/AP
Precharge or Activate
Read or Read w/AP
Write or Write w/AP
Precharge or Activate
Date: 2007-12-13
25
Minimum Delay with Concurrent Auto
Precharge Support
1 + (BL/2) +
BL/2
1
BL/2
CL (rounded up) + BL/2
1
Truth Table 6: Concurrent Auto Precharge
HY[B/I]25D512[40/80/16]0C[C/E/F/T](L)
t
512-Mbit Double-Data-Rate SDRAM
WTR
Table
Internet Data Sheet
18.
TABLE 18
Unit
t
t
t
t
t
t
CK
CK
CK
CK
CK
CK