NGB8206ANSL3G ON Semiconductor, NGB8206ANSL3G Datasheet

no-image

NGB8206ANSL3G

Manufacturer Part Number
NGB8206ANSL3G
Description
IGBT Transistors IGBT 20A 350V N-CHANNEL
Manufacturer
ON Semiconductor
Datasheet
1.NGB8206ANSL3G.pdf (8 pages)

Specifications of NGB8206ANSL3G

Rohs
yes
Collector- Emitter Voltage Vceo Max
390 V
Maximum Gate Emitter Voltage
15 V
Continuous Collector Current At 25 C
20 A
Gate-emitter Leakage Current
350 uA
Power Dissipation
150 W
Maximum Operating Temperature
+ 175 C
Package / Case
D2PAK
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
NGB8206N, NGB8206AN
Ignition IGBT
20 A, 350 V, N−Channel D
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
•
•
•
•
•
•
•
•
Applications
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 9
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ T
Continuous Gate Current
Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)
ESD (Charged−Device Model)
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD (Machine Model) R = 0 W, C = 200 pF
Total Power Dissipation @ T
Derate above 25°C
Operating & Storage Temperature Range
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
Stress Applied to Load
Microprocessor Devices
Ideal for Coil−on−Plug and Driver−on−Coil Applications
Gate−Emitter ESD Protection
Temperature Compensated Gate−Collector Voltage Clamp Limits
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Low Saturation Voltage
High Pulsed Current Capability
These are Pb−Free Devices
Ignition Systems
C
= 25°C − Pulsed
Rating
(T
J
= 25°C unless otherwise noted)
C
= 25°C
2
PAK
Symbol
T
V
V
ESD
ESD
ESD
J
V
P
, T
CES
CER
I
I
I
GE
C
G
G
D
stg
−55 to
Value
+175
$15
390
390
500
150
1.0
2.0
8.0
1.0
20
50
20
1
W/°C
Unit
A
A
mA
mA
kV
kV
°C
W
V
V
V
V
DC
AC
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
1
G
CASE 418B
STYLE 4
D
20 AMPS, 350 VOLTS
I
GB8206xx = Device Code
A
Y
WW
G
2
ORDERING INFORMATION
C
PAK
V
= 10 A, V
CE(on)
http://onsemi.com
R
R
GE
G
xx = N or AN
= Assembly Location
= Year
= Work Week
= Pb−Free Package
MARKING DIAGRAM
= 1.3 V @
Gate
Publication Order Number:
GE
1
4 Collector
GB
8206xxG
AYWW
Collector
. 4.5 V
2
C
E
NGB8206N/D
3
Emitter

Related parts for NGB8206ANSL3G

Image
Part Number
Description
Manufacturer
Datasheet
Request R
MC1723CP
Part Number:
MC1723CP
Description:
ON Semiconductor [VOLTAGE REGULATOR]
Manufacturer:
ON Semiconductor
Datasheet:
MC1723CP.pdf (8 pages)
1.5KE110ARL4G
Part Number:
1.5KE110ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1.5KE110ARL4G.pdf (8 pages)
1.5KE120ARL4G
Part Number:
1.5KE120ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1.5KE120ARL4G.pdf (8 pages)
1.5KE130ARL4G
Part Number:
1.5KE130ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1.5KE130ARL4G.pdf (8 pages)
1.5KE150ARL4G
Part Number:
1.5KE150ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1.5KE150ARL4G.pdf (8 pages)
1.5KE170ARL4G
Part Number:
1.5KE170ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1.5KE170ARL4G.pdf (8 pages)
1.5KE220ARL4G
Part Number:
1.5KE220ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1.5KE220ARL4G.pdf (8 pages)
1.5KE250ARL4G
Part Number:
1.5KE250ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1.5KE250ARL4G.pdf (8 pages)
1N6297ARL4G
Part Number:
1N6297ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1N6297ARL4G.pdf (8 pages)
1N6299ARL4G
Part Number:
1N6299ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1N6299ARL4G.pdf (8 pages)
1N6303ARL4G
Part Number:
1N6303ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1N6303ARL4G.pdf (8 pages)
MBRM140
Part Number:
MBRM140
Description:
Manufacturer:
ON Semiconductor
Datasheet:
MBRM140.pdf (8 pages)
P6KE120ARLG
Part Number:
P6KE120ARLG
Description:
Manufacturer:
ON Semiconductor
Datasheet:
P6KE120ARLG.pdf (5 pages)
NTHS5441T1
Part Number:
NTHS5441T1
Description:
Manufacturer:
ON Semiconductor
Datasheet:
NTHS5441T1.pdf (6 pages)
LVXC3245
Part Number:
LVXC3245
Description:
Manufacturer:
ON Semiconductor
Datasheet:
LVXC3245.pdf (10 pages)

NGB8206ANSL3G Summary of contents

Page 1

NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel ...

Page 2

UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS Characteristic Single Pulse Collector−to−Emitter Avalanche Energy 5 16 1 ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic ON CHARACTERISTICS (Note 3) Threshold Temperature Coefficient (Neg- ative) Collector−to−Emitter On−Voltage Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty ...

Page 4

ELECTRICAL CHARACTERISTICS Characteristic SWITCHING CHARACTERISTICS Turn−Off Delay Time (Resistive) Fall Time (Resistive) Turn−Off Delay Time (Inductive) Fall Time (Inductive) Turn−On Delay Time Rise Time *Maximum Value of Characteristic across Temperature Range. 3. Pulse Test: Pulse Width v 300 mS, Duty ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS 400 350 T = 25°C J 300 250 T = 175°C J 200 150 100 INDUCTOR (mH) Figure 1. Self Clamped Inductive Switching 2.0 1.75 1.5 1.25 1.0 0.75 0.5 0.25 ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS 25° 175° 0.5 1 1 GATE TO EMITTER VOLTAGE (V) GE ...

Page 7

... Figure 13. Best Case Transient Thermal Resistance (Non−normalized Junction−to−Case Mounted on Cold Plate) ORDERING INFORMATION Device NGB8206NG NGB8206NT4G NGB8206ANT4G NGB8206ANTF4G NGB8206ANSL3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. P (pk ...

Page 8

... F VIEW W−W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

Related keywords