NGB8206ANSL3G ON Semiconductor, NGB8206ANSL3G Datasheet - Page 2

• Manufacturer Part Number: NGB8206ANSL3G
• Description: IGBT Transistors IGBT 20A 350V N-CHANNEL
• Manufacturer: ON Semiconductor

Specifications of NGB8206ANSL3G

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 390 V
• Maximum Gate Emitter Voltage: 15 V
• Continuous Collector Current At 25 C: 20 A
• Gate-emitter Leakage Current: 350 uA
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT

1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Single Pulse Collector−to−Emitter Avalanche Energy
Reverse Avalanche Energy
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient (Note 1)
Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 2)
Collector−Emitter Clamp Voltage
Zero Gate Voltage Collector Current
Reverse Collector−Emitter Clamp
Voltage
Reverse Collector−Emitter Leakage Cur-
rent
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor
Gate−Emitter Resistor
Gate Threshold Voltage
V
V
V
V
CC
CC
CC
CC
= 50 V, V
= 50 V, V
= 50 V, V
= 100 V, V
Characteristic
GE
GE
GE
GE
= 5.0 V, Pk I
= 5.0 V, Pk I
= 5.0 V, Pk I
= 20 V, Pk I
L
L
L
L
= 16.7 A, L = 1.8 mH, R
= 14.9 A, L = 1.8 mH, R
= 14.1 A, L = 1.8 mH, R
= 25.8 A, L = 6.0 mH, Starting T
Characteristic
B
Symbol
BV
I
BV
V
VCES(R)
CES(R)
I
I
R
GE(th)
GES
CES
R
GE
CES
GES
G
http://onsemi.com
g
g
g
Test Conditions
= 1 kW Starting T
= 1 kW Starting T
= 1 kW Starting T
V
V
I
I
V
I
V
C
C
G
I
V
I
NGB8206A
CE
CE
NGB8206A
I
GE
C
V
C
V
V
C
CE
NGB8206
NGB8206
= −75 mA −
= −75 mA −
CE
= $5.0 mA
GE
GE
GE
= 1.0 mA,
= 2.0 mA
= 10 mA
= −24 V −
= −24 V −
= $5.0 V
= 175 V,
= 15 V,
= V
J
= 0 V
= 0 V
2
= 25°C
CE
J
J
J
= 25°C
= 150°C
= 175°C
T
T
T
T
T
T
J
J
J
J
J
J
= −40°C to 175°C
= −40°C to 175°C
= −40°C to 175°C
= −40°C to 175°C
= −40°C to 175°C
= −40°C to 175°C
Temperature
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
J
= 175°C
= −40°C
= 175°C
= −40°C
= 175°C
= −40°C
= 175°C
= −40°C
= 175°C
= −40°C
= 175°C
= −40°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
(−55° ≤ T
Symbol
E
R
R
E
AS(R)
T
qJC
qJA
AS
L
J
≤ 175°C)
0.005
0.005
14.25
0.05
0.05
Min
325
340
200
0.5
1.0
0.4
1.0
1.0
1.5
0.7
1.7
30
35
30
30
32
29
12
Value
2000
62.5
250
200
180
275
0.25
12.5
0.03
0.25
12.5
0.03
12.5
1.0
Typ
350
365
300
0.1
1.5
0.8
1.8
1.0
2.0
25
35
39
33
35
37
32
70
16
Max
100*
0.25
0.25
350*
375
390
2.3*
45*
1.0
5.0
0.5
1.0
2.1
1.3
10
39
37
39
42
37
25
25
14
25
°C/W
°C/W
Unit
mJ
mJ
°C
Unit
mA
mA
mA
kW
W
V
V
V
V