NGB8206ANSL3G ON Semiconductor, NGB8206ANSL3G Datasheet - Page 5

• Manufacturer Part Number: NGB8206ANSL3G
• Description: IGBT Transistors IGBT 20A 350V N-CHANNEL
• Manufacturer: ON Semiconductor

Specifications of NGB8206ANSL3G

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 390 V
• Maximum Gate Emitter Voltage: 15 V
• Continuous Collector Current At 25 C: 20 A
• Gate-emitter Leakage Current: 350 uA
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT

1.75
1.25
0.75
0.25
300
200
150
400
350
250
100
2.0
1.5
1.0
0.5
0.0
60
50
40
30
20
10
50
−50
0
0
0
0
V
T
Figure 1. Self Clamped Inductive Switching
J
GE
−25
Figure 3. Collector−to−Emitter Voltage vs.
= 25°C
5 V
V
V
1
CE
= 4.5 V
GE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
Figure 5. Collector Current vs.
= 10 V
2
Collector−to−Emitter Voltage
J
0
, JUNCTION TEMPERATURE (°C)
2
Junction Temperature
25
T
T
3
INDUCTOR (mH)
J
J
4
= 25°C
= 175°C
4.5 V
50
4
75
TYPICAL ELECTRICAL CHARACTERISTICS
6
5
100
V
V
R
I
I
I
I
I
C
C
C
C
C
6
125
CC
GE
G
= 25 A
= 20 A
= 15 A
= 10 A
= 7.5 A
= 1000 W
8
= 14 V
= 5.0 V
2.5 V
3.5 V
3 V
4 V
150
7
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175
10
8
5
30
25
20
15
10
50
40
60
50
40
30
20
10
60
30
20
10
−50
5
0
0
0
0
0
Figure 2. Open Secondary Avalanche Current
T
T
J
J
−25
= 175°C
= −40°C
5 V
V
V
V
1
1
V
CE
CE
GE
5 V
GE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 4. Collector Current vs.
, COLLECTOR TO EMITTER VOLTAGE (V)
T
Figure 6. Collector Current vs.
= 10 V
Collector−to−Emitter Voltage
Collector−to−Emitter Voltage
J
= 10 V
0
, JUNCTION TEMPERATURE (°C)
2
2
L = 1.8 mH
L = 3.0 mH
L = 10 mH
25
vs. Temperature
3
3
4.5 V
50
4
4
75
5
5
100
V
V
R
CC
GE
G
125
6
6
= 1000 W
= 14 V
= 5.0 V
150
7
7
4.5 V
2.5 V
3.5 V
2.5 V
3.5 V
4 V
3 V
3 V
4 V
175
8
8