NGB8206ANSL3G ON Semiconductor, NGB8206ANSL3G Datasheet - Page 7

• Manufacturer Part Number: NGB8206ANSL3G
• Description: IGBT Transistors IGBT 20A 350V N-CHANNEL
• Manufacturer: ON Semiconductor

Specifications of NGB8206ANSL3G

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 390 V
• Maximum Gate Emitter Voltage: 15 V
• Continuous Collector Current At 25 C: 20 A
• Gate-emitter Leakage Current: 350 uA
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ORDERING INFORMATION
NGB8206NG
NGB8206NT4G
NGB8206ANT4G
NGB8206ANTF4G
NGB8206ANSL3G
0.01
0.000001
0.1
1
0.01
0.05
0.02
0.1
Duty Cycle = 0.5
0.2
Single Pulse
Device
0.00001
(Non−normalized Junction−to−Case Mounted on Cold Plate)
Figure 13. Best Case Transient Thermal Resistance
0.0001
http://onsemi.com
t,TIME (S)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
7
D
D
D
D
D
0.001
2
2
2
2
2
P
DUTY CYCLE, D = t
PAK
PAK
PAK
PAK
PAK
(pk)
t
1
t
2
0.01
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
− T
800 / Tape & Reel
800 / Tape & Reel
700 / Tape & Reel
A
50 Units / Rail
50 Units / Rail
= P
Shipping
0.1
(pk)
1
R
qJC
†
(t)
1