NGB8206ANSL3G ON Semiconductor, NGB8206ANSL3G Datasheet - Page 6

• Manufacturer Part Number: NGB8206ANSL3G
• Description: IGBT Transistors IGBT 20A 350V N-CHANNEL
• Manufacturer: ON Semiconductor

Specifications of NGB8206ANSL3G

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 390 V
• Maximum Gate Emitter Voltage: 15 V
• Continuous Collector Current At 25 C: 20 A
• Gate-emitter Leakage Current: 350 uA
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT

2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
45
40
35
30
25
20
15
10
12
10
5
0
4
2
0
8
6
0
−50
25
0
V
Figure 11. Resistive Switching Fall Time vs.
CE
−25
0.5
= 5 V
Figure 9. Gate Threshold Voltage vs.
50
Figure 7. Transfer Characteristics
V
Mean − 4 s
T
GE
Mean + 4 s
T
J
J
0
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
, GATE TO EMITTER VOLTAGE (V)
1
T
75
J
25
= 175°C
1.5
T
Temperature
Temperature
J
= 25°C
50
100
2
Mean
75
TYPICAL ELECTRICAL CHARACTERISTICS
2.5
t
125
100
fall
T
J
= −40°C
V
V
R
I
R
3
C
125
CC
GE
G
L
= 9.0 A
t
= 33 W
delay
= 1000 W
150
= 300 V
= 5.0 V
3.5
150
http://onsemi.com
175
175
4
6
100000
10000
10000
1000
1000
100
100
1.0
0.1
1.0
0.1
10
10
12
10
−50
8
6
4
2
0
25
0
V
V
R
I
L = 300 mH
Figure 12. Inductive Switching Fall Time vs.
C
−25
CC
GE
G
V
= 9.0 A
Figure 8. Collector−to−Emitter Leakage
CE
= 1000 W
= 300 V
= 5.0 V
50
, COLLECTOR TO EMITTER VOLTAGE (V)
T
5
T
J
Collector−to−Emitter Voltage
J
0
, JUNCTION TEMPERATURE (°C)
Figure 10. Capacitance vs.
, JUNCTION TEMPERATURE (°C)
Current vs. Temperature
25
75
V
CE
V
Temperature
10
CE
= −24 V
50
= 175 V
C
C
t
100
C
delay
oss
rss
iss
t
fall
75
15
100
125
125
20
150
150
175
175
25