NGB8206ANSL3G ON Semiconductor, NGB8206ANSL3G Datasheet - Page 4

• Manufacturer Part Number: NGB8206ANSL3G
• Description: IGBT Transistors IGBT 20A 350V N-CHANNEL
• Manufacturer: ON Semiconductor

Specifications of NGB8206ANSL3G

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 390 V
• Maximum Gate Emitter Voltage: 15 V
• Continuous Collector Current At 25 C: 20 A
• Gate-emitter Leakage Current: 350 uA
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 175 C
• Package / Case: D2PAK
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT

ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Turn−Off Delay Time (Resistive)
Fall Time (Resistive)
Turn−Off Delay Time (Inductive)
Fall Time (Inductive)
Turn−On Delay Time
Rise Time
Characteristic
Symbol
t
t
t
d(off)
d(off)
d(on)
t
t
t
r
f
f
V
R
V
R
V
R
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CC
G
CC
CC
G
G
Test Conditions
= 1.0 kW, R
= 1.0 kW, R
= 1.0 kW, L = 300
= 14 V, I
= 300 V, I
= 300 V, I
V
V
V
GE
GE
GE
mH
W
W
A
A
= 5 V
= 5 V
= 5 V
4
C
C
C
= 9.0 A
L
L
= 9.0
= 9.0
= 1.5
= 33
Temperature
T
T
T
T
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
J
J
J
J
= 175°C
= 175°C
= 175°C
= 175°C
= 175°C
= 175°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
Min
6.0
6.0
4.0
8.0
3.0
5.0
1.5
5.0
1.0
1.0
4.0
3.0
10.5
Typ
8.0
8.0
6.0
5.0
7.0
3.0
7.0
1.5
1.5
6.0
5.0
Max
8.0
7.0
9.0
4.5
2.0
2.0
8.0
7.0
10
10
14
10
mSec
Unit