IGW50N65F5FKSA1 Infineon Technologies, IGW50N65F5FKSA1 Datasheet - Page 11

• Manufacturer Part Number: IGW50N65F5FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IGW50N65F5FKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 305 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 56 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IGW50N65F5 SP000973426

Figure 17. Typicalcapacitanceasafunctionof
1E+4
1000
100
10
1
0
V
CE
collector-emittervoltage
(V
,COLLECTOR-EMITTERVOLTAGE[V]
C
C
C
GE
5
iss
oss
rss
=0V,f=1MHz)
10
15
20
Highspeedswitchingseriesfifthgeneration
25
30
11
Figure 18. IGBTtransientthermalresistance
0.001
0.01
0.1
1
1E-6
(D=t
1E-5
p
/T)
t
1E-4
p
,PULSEWIDTH[s]
i:
r
i
[K/W]:
i
[s]:
0.001
1
0.1621884
8.6E-4
IGW50N65F5
0.01
Rev.1.1,2012-11-09
2
0.2278266
0.01112208
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0.1
3
0.109985
0.09568113
1