IGW50N65F5FKSA1 Infineon Technologies, IGW50N65F5FKSA1 Datasheet - Page 12

• Manufacturer Part Number: IGW50N65F5FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IGW50N65F5FKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 305 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 56 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IGW50N65F5 SP000973426

IGW50N65F5
Highspeedswitchingseriesfifthgeneration
PG-TO247-3
12
Rev.1.1,2012-11-09