IGW50N65F5FKSA1 Infineon Technologies, IGW50N65F5FKSA1 Datasheet - Page 8

• Manufacturer Part Number: IGW50N65F5FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IGW50N65F5FKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 305 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 56 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IGW50N65F5 SP000973426

Figure 5. Typicaloutputcharacteristic
Figure 7. Typicalcollector-emittersaturationvoltageas
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
150
135
120
105
90
75
60
45
30
15
0
0
0
V
V
GE
(T
afunctionofjunctiontemperature
(V
CE
=20V
vj
18V
15V
12V
10V
,COLLECTOR-EMITTERVOLTAGE[V]
T
GE
25
=150°C)
8V
7V
6V
5V
I
I
I
vj
C
C
C
=15V)
,JUNCTIONTEMPERATURE[°C]
=12,5A
=25A
=50A
1
50
2
75
100
3
125
Highspeedswitchingseriesfifthgeneration
4
150
175
5
8
Figure 6. Typicaltransfercharacteristic
Figure 8. Typicalswitchingtimesasafunctionof
1000
150
140
130
120
110
100
100
90
80
70
60
50
40
30
20
10
10
0
1
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5
0
(V
collectorcurrent
(inductiveload,T
V
Figure E)
GE
CE
V
T
T
t
t
t
t
=15/0V,r
d(off)
f
d(on)
r
GE
=20V)
j
j
=25°C
=150°C
I
30
C
,GATE-EMITTERVOLTAGE[V]
,COLLECTORCURRENT[A]
G
=12 ,Dynamictestcircuitin
60
vj
=150°C,V
IGW50N65F5
90
Rev.1.1,2012-11-09
CE
=400V,
120
150