IGW50N65F5FKSA1 Infineon Technologies, IGW50N65F5FKSA1 Datasheet - Page 9

• Manufacturer Part Number: IGW50N65F5FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IGW50N65F5FKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 305 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 56 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IGW50N65F5 SP000973426

Figure 9. Typicalswitchingtimesasafunctionofgate
Figure 11. Gate-emitterthresholdvoltageasafunction
1000
100
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
10
1
5
0
resistor
(inductiveload,T
V
Figure E)
ofjunctiontemperature
(I
GE
15
T
C
t
t
t
t
=15/0V,I
vj
=0.5mA)
d(off)
f
d(on)
r
25
,JUNCTIONTEMPERATURE[°C]
25
r
G
,GATERESISTOR[ ]
50
typ.
min.
max.
C
=25A,Dynamictestcircuitin
35
vj
=150°C,V
45
75
55
100
CE
=400V,
65
Highspeedswitchingseriesfifthgeneration
125
75
150
85
9
Figure 10. Typicalswitchingtimesasafunctionof
Figure 12. Typicalswitchingenergylossesasa
1000
100
10
11
10
1
9
8
7
6
5
4
3
2
1
0
25
0
junctiontemperature
(inductiveload,V
I
Figure E)
functionofcollectorcurrent
(inductiveload,T
V
Figure E)
C
T
GE
=25A,r
t
t
t
t
E
E
E
vj
d(off)
f
d(on)
r
50
,JUNCTIONTEMPERATURE[°C]
off
on
ts
=15/0V,r
I
30
C
,COLLECTORCURRENT[A]
G
=12 ,Dynamictestcircuitin
75
G
60
=12 ,Dynamictestcircuitin
CE
vj
100
=150°C,V
=400V,V
IGW50N65F5
90
125
Rev.1.1,2012-11-09
GE
CE
=400V,
=15/0V,
120
150
175
150