IGW50N65F5FKSA1 Infineon Technologies, IGW50N65F5FKSA1 Datasheet - Page 6

• Manufacturer Part Number: IGW50N65F5FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IGW50N65F5FKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 305 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 56 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IGW50N65F5 SP000973426

SwitchingCharacteristic,InductiveLoad,atT
IGBTCharacteristic
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Symbol Conditions
t
t
t
t
E
E
E
t
t
t
t
E
E
E
d(on)
r
d(off)
f
d(on)
r
d(off)
f
on
off
ts
on
off
ts
Highspeedswitchingseriesfifthgeneration
T
V
V
r
C =30pF
L ,C fromFig.E
Energy losses include “tail” and
diode reverse recovery.
T
V
V
r
C =30pF
L ,C fromFig.E
Energy losses include “tail” and
diode reverse recovery.
G
G
vj
vj
CC
GE
CC
GE
vj
=12.0 ,L =30nH,
=12.0 ,L =30nH,
=150°C,
=150°C,
=150°C
=400V,I
=0.0/15.0V,
=400V,I
=0.0/15.0V,
6
C
C
=25.0A,
=6.0A,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IGW50N65F5
Value
0.68
0.21
0.89
0.18
0.06
0.24
typ.
202
245
Rev.1.1,2012-11-09
20
15
18
12
3
5
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
mJ
mJ
mJ
mJ
mJ
mJ
ns
ns
ns
ns
ns
ns
ns
ns