IKP15N65H5 Infineon Technologies, IKP15N65H5 Datasheet
IKP15N65H5
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IKP15N65H5 Summary of contents
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... IGBT Highspeed5IGBTinTRENCHSTOP fastandsoftantiparalleldiode IKP15N65H5 650VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl TM technologycopackedwithRAPID1 ...
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... Applications: •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters KeyPerformanceandPackageParameters Type V CE IKP15N65H5 650V 15A Highspeedswitchingseriesfifthgeneration TM technologycopackedwithRAPID ,T =25° CEsat vj vjmax 1.65V 175°C 2 IKP15N65H5 Marking Package K15H655 PG-TO220-3 Rev.1.1,2012-11-09 ...
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... TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 5 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Highspeedswitchingseriesfifthgeneration 3 IKP15N65H5 Rev.1.1,2012-11-09 ...
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... V CE vjmax vjmax Cpuls 175° vjmax vjmax Fpuls tot stg M Symbol Conditions IKP15N65H5 Value Unit 650 V 30.0 A 18.0 45.0 A 45.0 A 20.0 A 12.0 45.0 A ±20 V 105.0 W 48.0 -40...+175 °C -55...+150 °C °C 260 0.6 Nm Max.Value Unit 1.40 K/W 2.90 K/W 62 K/W Rev.1.1,2012-11-09 ...
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... Symbol Conditions t T =25°C, d(on =400V,I =7.5A =0.0/15.0V =39.0 ,L =30nH, d(off =30pF ,C fromFig. Energy losses include “tail” and diode reverse recovery. E off IKP15N65H5 Value Unit min. typ. max. 650 - - V - 1. 1. 1.40 - 3.2 4.0 4 40.0 µ ...
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... E off =150°C, d(on =400V,I =2.0A =0.0/15.0V =39.0 ,L =30nH, d(off =30pF ,C fromFig. Energy losses include “tail” and diode reverse recovery. E off IKP15N65H5 - 138 - 0.20 - µ ...
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... Diode peak rate of fall of reverse recoverycurrentduringt b Highspeedswitchingseriesfifthgeneration t T =150° =400V =7.5A /dt=1000A/µs rrm =150° =400V =2.0A /dt=1000A/µs rrm IKP15N65H5 - 0.42 - µ -160 - A/µ 0.21 - µ -310 - A/µs Rev.1.1,2012-11-09 ...
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... Figure 2. Powerdissipationasafunctionofcase =15V. temperature GE 7.5V =20V GE 18V 30 12V 10V 150 175 0.0 0.5 V ,COLLECTOR-EMITTERVOLTAGE[V] CE Figure 4. Typicaloutputcharacteristic (T =25° IKP15N65H5 75 100 125 150 T ,CASETEMPERATURE[°C] C 175°C) 1.0 1.5 2.0 2.5 3.0 3.5 Rev.1.1,2012-11-09 175 4.0 ...
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... V GE Figure 6. Typicaltransfercharacteristic (V =20V) CE 1000 t d(off d(on 100 10 1 125 150 175 Figure 8. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,T V =15/0V,r GE Figure E) 9 IKP15N65H5 5.5 6.0 6.5 7.0 7.5 8.0 ,GATE-EMITTERVOLTAGE[ ,COLLECTORCURRENT[A] =150°C,V =400V =39 ,Dynamictestcircuitin G Rev.1.1,2012-11-09 8.5 45 ...
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... CE I =7,5A,r C Figure E) 1.6 E off 1.4 ts 1.2 1.0 0.8 0.6 0.4 0.2 0.0 125 150 175 0 5 Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,T V =15/0V,r GE Figure E) 10 IKP15N65H5 75 100 125 150 =400V,V =15/0V =39 ,Dynamictestcircuit ,COLLECTORCURRENT[A] C =150°C,V =400V =39 ,Dynamictestcircuitin G Rev.1.1,2012-11-09 175 45 ...
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... Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature =400V, (inductiveload, =7,5A,r C Figure E) 16 130V 520V 450 500 0 5 Figure 16. Typicalgatecharge (I =15A) C =15/0V IKP15N65H5 75 100 125 150 175 =400V,V =15/0V =39 ,Dynamictestcircuit ,GATECHARGE[nC] GE Rev.1.1,2012-11-09 ...
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... Figure 18. IGBTtransientthermalresistance (D D=0.5 0.2 0.1 70 0.05 0.02 0.01 60 single pulse 0.9864113 0.5566891 2.3E-3 0.02112308 30 0.01 0.1 1 600 800 di /dt,DIODECURRENTSLOPE[A/µs] F Figure 20. Typicalreverserecoverytimeasafunction ofdiodecurrentslope ( IKP15N65H5 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse [K/W]: 0.3389743 0.8017237 0.7055106 0.3537915 i [s]: 2.2E-5 3.2E-4 3.0E-3 0.02235159 i 1E-5 1E-4 0.001 0.01 0.1 t ,PULSEWIDTH[ =25° 7.5A ...
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... F Figure 22. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (V =400V =25° =150° 1600 1800 2000 0.0 0.5 Figure 24. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 IKP15N65H5 = 7. 7.5A F 1000 1200 1400 1600 1800 2000 1.0 1.5 2.0 V ,FORWARDVOLTAGE[V] F Rev.1.1,2012-11-09 2.5 ...
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... T ,JUNCTIONTEMPERATURE[°C] vj Figure 25. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Highspeedswitchingseriesfifthgeneration I =4, = =18A F 150 175 14 IKP15N65H5 Rev.1.1,2012-11-09 ...
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... Highspeedswitchingseriesfifthgeneration PG-TO220-3 15 IKP15N65H5 Rev.1.1,2012-11-09 ...
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... Highspeedswitchingseriesfifthgeneration 16 IKP15N65H5 t Rev.1.1,2012-11-09 ...
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... TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. Highspeedswitchingseriesfifthgeneration 17 IKP15N65H5 Rev.1.1,2012-11-09 ...