IKP15N65H5 Infineon Technologies, IKP15N65H5 Datasheet - Page 14

• Manufacturer Part Number: IKP15N65H5
• Description: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
• Manufacturer: Infineon Technologies

Specifications of IKP15N65H5

• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 48 W
• Package / Case: PG-TO-220-3
• Mounting Style: Through Hole
• Part # Aliases: IKP15N65H5XKSA1

Figure 25. Typicaldiodeforwardvoltageasafunction
2.0
1.8
1.6
1.4
1.2
1.0
0.8
25
ofjunctiontemperature
T
vj
50
,JUNCTIONTEMPERATURE[°C]
75
100
125
I
I
I
F
F
F
=4,5A
=9A
=18A
Highspeedswitchingseriesfifthgeneration
150
175
14
IKP15N65H5
Rev.1.1,2012-11-09