IKP15N65H5 Infineon Technologies, IKP15N65H5 Datasheet - Page 2

• Manufacturer Part Number: IKP15N65H5
• Description: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
• Manufacturer: Infineon Technologies

Specifications of IKP15N65H5

• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 48 W
• Package / Case: PG-TO-220-3
• Mounting Style: Through Hole
• Part # Aliases: IKP15N65H5XKSA1


KeyPerformanceandPackageParameters
Highspeed5IGBTinTRENCHSTOP
fastandsoftantiparalleldiode
FeaturesandBenefits:
HighspeedH5technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowQ
•IGBTcopackedwithRAPID1fastandsoftantiparalleldiode
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•Solarconverters
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
Type
IKP15N65H5
g
650V
V
CE
15A
I
C
V
Highspeedswitchingseriesfifthgeneration
CEsat
1.65V
,T
vj
=25°C
2
TM
technologycopackedwithRAPID1
175°C
T
vjmax
K15H655
Marking
G
C E
IKP15N65H5
Rev.1.1,2012-11-09
G
PG-TO220-3
Package
C
C
E