IKP15N65H5 Infineon Technologies, IKP15N65H5 Datasheet - Page 4

• Manufacturer Part Number: IKP15N65H5
• Description: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
• Manufacturer: Infineon Technologies

Specifications of IKP15N65H5

• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 48 W
• Package / Case: PG-TO-220-3
• Mounting Style: Through Hole
• Part # Aliases: IKP15N65H5XKSA1

Maximumratings
ThermalResistance
Characteristic
Parameter
Collector-emitter voltage
DCcollectorcurrent,limitedbyT
T
T
Pulsedcollectorcurrent,t
TurnoffsafeoperatingareaV
Diodeforwardcurrent,limitedbyT
T
T
Diodepulsedcurrent,t
Gate-emitter voltage
PowerdissipationT
PowerdissipationT
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
Parameter
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
C
C
C
C
=25°C
=100°C
=25°C
=100°C
C
C
=25°C
=100°C
p
limitedbyT
p
limitedbyT
CE
 650V,T
vjmax
vjmax
vjmax
Symbol Conditions
R
R
R
vjmax
th(j
th(j
th(j
-
-
-
Highspeedswitchingseriesfifthgeneration
c)
c)
a)
vj
 175°C
4
Symbol
V
I
I
-
I
I
V
P
T
T
M
C
Cpuls
F
Fpuls
vj
stg
CE
GE
tot
-40...+175
-55...+150
Value
105.0
30.0
18.0
45.0
45.0
20.0
12.0
45.0
48.0
Max.Value
650
±20
260
0.6
IKP15N65H5
1.40
2.90
Rev.1.1,2012-11-09
62
Unit
Nm
°C
°C
°C
W
V
A
A
A
A
A
V
Unit
K/W
K/W
K/W