IKP15N65H5 Infineon Technologies, IKP15N65H5 Datasheet - Page 9

• Manufacturer Part Number: IKP15N65H5
• Description: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
• Manufacturer: Infineon Technologies

Specifications of IKP15N65H5

• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 48 W
• Package / Case: PG-TO-220-3
• Mounting Style: Through Hole
• Part # Aliases: IKP15N65H5XKSA1

Figure 5. Typicaloutputcharacteristic
Figure 7. Typicalcollector-emittersaturationvoltageas
2.25
2.00
1.75
1.50
1.25
1.00
0.75
45
40
35
30
25
20
15
10
5
0
0.0
0
V
V
GE
(T
afunctionofjunctiontemperature
(V
CE
=20V
0.5
vj
18V
12V
10V
,COLLECTOR-EMITTERVOLTAGE[V]
T
GE
25
=150°C)
8V
7V
6V
5V
4V
I
I
I
vj
C
C
C
=15V)
,JUNCTIONTEMPERATURE[°C]
=3,8A
=7,5A
=15A
1.0
50
1.5
75
2.0
100
2.5
125
3.0
Highspeedswitchingseriesfifthgeneration
150
3.5
175
4.0
9
Figure 6. Typicaltransfercharacteristic
Figure 8. Typicalswitchingtimesasafunctionof
1000
100
45
40
35
30
25
20
15
10
10
5
0
1
4.5
0
(V
collectorcurrent
(inductiveload,T
V
Figure E)
5.0
GE
5
CE
V
T
T
t
t
t
t
=15/0V,r
d(off)
f
d(on)
r
GE
=20V)
j
j
=25°C
=150°C
I
C
,GATE-EMITTERVOLTAGE[V]
10
,COLLECTORCURRENT[A]
5.5
15
G
6.0
=39 ,Dynamictestcircuitin
20
vj
=150°C,V
6.5
25
7.0
IKP15N65H5
30
Rev.1.1,2012-11-09
CE
=400V,
7.5
35
8.0
40
8.5
45