PSMN7R0-100XS,127 NXP Semiconductors, PSMN7R0-100XS,127 Datasheet - Page 2

• Manufacturer Part Number: PSMN7R0-100XS,127
• Description: MOSFET N-CH 100V 6.8 MOHMS STD LVL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-100XS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38.9 A
• Resistance Drain-source Rds (on): 5.4 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 57.7 W
• Factory Pack Quantity: 50

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN7R0-100XS
Product data sheet
Pin
1
2
3
mb
Type number
PSMN7R0-100XS
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
Symbol Description
G
D
S
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
gate
drain
source
mounting base; isolated
TO-220F
Package
Name
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
Description
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220 "full pack"
All information provided in this document is subject to legal disclaimers.
Conditions
T
T
V
V
pulsed; t
T
T
pulsed; t
V
unclamped; R
j
j
mb
mb
GS
GS
GS
≥ 25 °C; T
≥ 25 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
Rev. 3 — 6 March 2012
Simplified outline
p
p
≤ 10 µs; T
≤ 10 µs; T
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
SOT186A (TO-220F)
= 25 °C; see
= 100 °C; see
= 50 Ω; see
Figure 2
= 25 °C; I
mb
mb
1
= 25 °C; see
= 25 °C
mb
2
GS
3
D
= 20 kΩ
= 55 A; V
Figure 3
Figure 1
Figure 1
Figure 4
sup
PSMN7R0-100XS
≤ 100 V;
Graphic symbol
mbb076
G
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
© NXP B.V. 2012. All rights reserved.
D
S
175
175
Version
SOT186A
Max
100
100
20
55
38.9
220
57.7
260
48
220
420
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
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