PSMN7R0-100XS,127 NXP Semiconductors, PSMN7R0-100XS,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN7R0-100XS,127
• Description: MOSFET N-CH 100V 6.8 MOHMS STD LVL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-100XS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38.9 A
• Resistance Drain-source Rds (on): 5.4 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 57.7 W
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN7R0-100XS
Product data sheet
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
V
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All information provided in this document is subject to legal disclaimers.
DS
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(V)
C
C
C
oss
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2
Rev. 3 — 6 March 2012
Fig 15. Gate-source voltage as a function of gate
Fig 17. Input and reverse transfer capacitances as a
(pF)
C
12000
10000
V
(V)
8000
6000
4000
2000
GS
10
8
6
4
2
0
0
charge; typical values
function of gate-source voltage, typical values
0
0
V
DS
= 20V
50V
40
3
PSMN7R0-100XS
80V
80
6
120
9
© NXP B.V. 2012. All rights reserved.
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Q
V
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G
GS
(nC)
(V)
C
C
iss
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