PSMN7R0-100XS,127 NXP Semiconductors, PSMN7R0-100XS,127 Datasheet - Page 5

• Manufacturer Part Number: PSMN7R0-100XS,127
• Description: MOSFET N-CH 100V 6.8 MOHMS STD LVL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-100XS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38.9 A
• Resistance Drain-source Rds (on): 5.4 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 57.7 W
• Factory Pack Quantity: 50

NXP Semiconductors
5. Thermal characteristics
Table 5.
6. Isolation characteristics
Table 6.
[1]
PSMN7R0-100XS
Product data sheet
Symbol
R
R
Symbol
C
V
Fig 5.
isol(RMS)
th(j-mb)
th(j-a)
isol
Z
(K/W)
th(j-mb)
f = 1 MHz
10
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
δ = 0.5
0.02
Thermal characteristics
Isolation characteristics
0.2
0.1
0.05
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Parameter
isolation capacitance
RMS isolation voltage
single shot
10
-5
10
-4
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
Conditions
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; sinusoidal
waveform; clean and dust free
All information provided in this document is subject to legal disclaimers.
10
-3
Rev. 3 — 6 March 2012
10
-2
Conditions
see
vertical in free air
Figure 5
10
-1
PSMN7R0-100XS
[1]
1
Min
-
-
Min
-
-
P
10
t
Typ
2.35
55
Typ
10
-
p
T
© NXP B.V. 2012. All rights reserved.
t
003aag576
p
δ =
(s)
-
Max
2.6
Max
-
2500
T
t
p
t
10
2
Unit
K/W
K/W
Unit
pF
V
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