PSMN7R0-100XS,127 NXP Semiconductors, PSMN7R0-100XS,127 Datasheet - Page 4

• Manufacturer Part Number: PSMN7R0-100XS,127
• Description: MOSFET N-CH 100V 6.8 MOHMS STD LVL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN7R0-100XS,127

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38.9 A
• Resistance Drain-source Rds (on): 5.4 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220F
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 57.7 W
• Factory Pack Quantity: 50

NXP Semiconductors
PSMN7R0-100XS
Product data sheet
Fig 4.
(A)
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D
10
10
10
10
-1
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
-1
Limit R
DSon
1
= V
N-channel 100V 6.8 mΩ standard level MOSFET in TO220F (SOT186A)
DS
All information provided in this document is subject to legal disclaimers.
/ I
D
Rev. 3 — 6 March 2012
DC
10
PSMN7R0-100XS
10
2
t
100 μ s
1 ms
10 ms
100 ms
p
=10 μ s
V
DS
(V)
© NXP B.V. 2012. All rights reserved.
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