BUK9609-75A /T3 NXP Semiconductors, BUK9609-75A /T3 Datasheet - Page 4

• Manufacturer Part Number: BUK9609-75A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9609-75A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 75 A
• Resistance Drain-source Rds (on): 0.0085 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 226 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 230 W
• Rise Time: 185 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 424 ns
• Part # Aliases: BUK9609-75A,118

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9609-75A
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Thermal characteristics
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
−6
δ = 0.5
0.2
0.1
0.05
0.02
Single Shot
10
−5
All information provided in this document is subject to legal disclaimers.
10
−4
Rev. 4 — 30 August 2011
Conditions
see
minimum footprint ; mounted on a
printed-circuit board
Figure 4
10
−3
10
−2
N-channel TrenchMOS logic level FET
P
10
t
p
−1
T
t
p
BUK9609-75A
δ =
Min
-
-
(s)
03nb45
T
t
t
p
1
Typ
-
50
© NXP B.V. 2011. All rights reserved.
Max
0.65
-
Unit
K/W
K/W
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