NetduinoPlus2 Netduino, NetduinoPlus2 Datasheet - Page 76

• Manufacturer Part Number: NetduinoPlus2
• Description: Development Boards & Kits - ARM NETDUINO PLUS 2
• Manufacturer: Netduino

Specifications of NetduinoPlus2

• Rohs: yes
• Product: Development Boards
• Tool Is For Evaluation Of: STM32F405RG
• Core: ARM Cortex M4
• Interface Type: I2C, SPI, UART, USB
• Operating Supply Voltage: 7.5 v to 9 V
• Data Bus Width: 32 bit
• Description/function: Arduino form factor
• Dimensions: 2.8 in x 2.1 in
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C

Electrical characteristics
5.3.6
76/180
Table 18.
1. The product behavior is guaranteed by design down to the minimum V
2. The average expected gain in power consumption when VOS = 0 compared to VOS = 1 is around 10% for
3. Guaranteed by design, not tested in production.
4. The reset temporization is measured from the power-on (POR reset or wakeup from V
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in
measurement
All Run mode current consumption measurements given in this section are performed using
a CoreMark-compliant code.
T
RSTTEMPO
V
the whole temperature range, when the system clock frequency is between 30 and 144 MHz.
when first instruction is read by the user application code.
E
Symbol
BORhyst
I
V
V
V
RUSH
RUSH
V
BOR1
BOR2
BOR3
12
(3)
(3)
(3)
(3)(4)
Embedded reset and power control block characteristics (continued)
scheme.
Brownout level 1
threshold
Brownout level 2
threshold
Brownout level 3
threshold
1.2 V domain
voltage
BOR hysteresis
Reset temporization
InRush current on
voltage regulator
power-on (POR or
wakeup from Standby)
InRush energy on
voltage regulator
power-on (POR or
wakeup from Standby)
Parameter
(2)(3)
Doc ID 022152 Rev 3
Falling edge
Rising edge
Falling edge
Rising edge
Falling edge
Rising edge
VOS bit in PWR_CR
register = 0
VOS bit in PWR_CR
register = 1
V
I
RUSH
DD
= 1.8 V, T
= 171 mA for 31 µs
Conditions
A
= 105 °C,
Figure 20: Current consumption
POR/PDR
STM32F405xx, STM32F407xx
2.13
2.23
2.44
2.53
2.75
2.85
1.08
1.20
Min
0.5
value.
-
-
-
BAT
2.19
2.29
2.50
2.59
2.83
2.92
1.14
1.26
Typ
100
160
1.5
-
) to the instant
Max
2.24
2.33
2.56
2.63
2.88
2.97
1.20
1.32
200
3.0
5.4
-
Unit
mV
mA
ms
µC
V
V
V
V
V
V
V
V