SI5504DC-T1 Vishay/Siliconix, SI5504DC-T1 Datasheet - Page 4

• Manufacturer Part Number: SI5504DC-T1
• Description: MOSFET 30V 3.9/2.8A
• Manufacturer: Vishay/Siliconix

Specifications of SI5504DC-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.9 A, 2.8 A
• Resistance Drain-source Rds (on): 85 mOhms, 165 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: 1206-8 ChipFET
• Fall Time: 12 ns at N Channel, 11 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 12 ns at N Channel, 11 ns at P Channel
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 12 ns at N Channel, 14 ns at P Channel

Si5504DC
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
0.4
0.2
0.0
10
0.01
1
0.1
- 50
0
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
Source-Drain Diode Forward Voltage
0.2
V
I
Single Pulse
SD
0
D
= 250
- Source-to-Drain Voltage (V)
0.4
T
Threshold Voltage
J
10
25
- Temperature (°C)
T
µA
-3
J
= 150 °C
50
0.6
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.8
10
100
-2
T
J
= 25 °C
1.0
125
1.2
150
Square Wave Pulse Duration (s)
10
-1
0.20
0.15
0.10
0.05
0.00
1
50
40
30
20
10
0
10
0
-4
On-Resistance vs. Gate-to-Source Voltage
10
-3
2
V
GS
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
10
Notes:
P
Single Pulse Power
-2
DM
- Gate-to-Source Voltage (V)
JM
- T
10
A
4
t
1
= P
-1
Time (s)
S10-0547-Rev. C, 08-Mar-10
t
2
DM
I
D
Document Number: 71056
Z
= 2.9 A
thJA
thJA
1
100
6
t
t
(t)
1
2
= 90 °C/W
10
8
100
600
600
10